Radiation imagery chemistry: process – composition – or product th – Electric or magnetic imagery – e.g. – xerography,... – Radiation-sensitive composition or product
Patent
1985-10-10
1987-07-28
Kettle, John E.
Radiation imagery chemistry: process, composition, or product th
Electric or magnetic imagery, e.g., xerography,...
Radiation-sensitive composition or product
2525011, 357 2, 427 74, 430 63, 430 66, 430 67, 430 95, G03C 508, G03C 504
Patent
active
046831860
ABSTRACT:
A photoconductive device including a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface. The surface protection layer has an optical energy gap larger than that of the photoconductive layer.
A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.
REFERENCES:
patent: 4394425 (1983-07-01), Shimizu et al.
patent: 4409308 (1983-10-01), Shimizu et al.
patent: 4414319 (1983-11-01), Shirai et al.
patent: 4460669 (1984-07-01), Ogawa et al.
patent: 4461820 (1984-07-01), Shirai et al.
patent: 4471042 (1984-09-01), Komatsu et al.
patent: 4486521 (1984-12-01), Misumi et al.
patent: 4490454 (1984-12-01), Misumi et al.
Nagata Shoichi
Nakamura Masatsugu
Ohashi Kunio
Tonegawa Tadashi
Kettle John E.
Shah Mukund J.
Sharp Kabushiki Kaisha
LandOfFree
Doped amorphous silicon photoconductive device having a protecti does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Doped amorphous silicon photoconductive device having a protecti, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doped amorphous silicon photoconductive device having a protecti will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2034730