Doped absorption for enhanced responsivity for high speed...

Details Doped absorption for enhanced responsivity for high speed... Doped absorption for enhanced responsivity for high speed...

2007-04-10

2007-04-10

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE31061, C257SE21336, C257SE31035, C257SE21125

Reexamination Certificate

active

10736859

ABSTRACT:
A photodiode with a semiconductor intrinsic light absorption layer has at least one p-doped light absorption layer or an n-doped light absorption layer, and preferably both. The diode also has a cathode electrode and an anode electrode electrically coupled with the p-doped light absorption layer or the n-doped light absorption layer.

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