Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-01-09
2007-01-09
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S085000
Reexamination Certificate
active
10735494
ABSTRACT:
An InGaAs/InAlAs-based avalanche photodetector provides high gain and high bandwidth over a range of operating biases. A graded transition region alleviates the barrier to electron transport from the absorption region to the multiplication region when an operating bias is applied. The graded transition region is a graded bandgap material with a relatively wide bandwidth in the region closer to the multiplication region and a relatively narrow bandgap in the region closer to the absorption region. In another embodiment, a p-type dopant profile is introduced within the absorption layer to produce an electrostatic field which accelerates electrons towards the multiplication region. In another embodiment, a bi-level multiplication region with a wide bandgap ternary layer and a narrower bandgap quarternary layer is provided at an increased thickness to improve gain per unit length.
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Christie Parker & Hale
Dickey Thomas L.
TriQuint Technology Holding Co.
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