Dopant sources for CMOS device

Details Dopant sources for CMOS device Dopant sources for CMOS device

1990-02-05

1992-05-26

Kunemund, Robert

Fishing, trapping, and vermin destroying

437152, 437164, H01L 2170, H01L 2176, H01L 21331

Patent

active

051167786

ABSTRACT:
A process is provided for doping both sidewalls (26, 28) of isolation trenches (24, 26, 28) and connector regions (46, 48) between sources (58) and gate areas (62) and between drains (60) and gate areas in silicon CMOS devices. Appropriately doped glasses (16, 18, 30) formed on the silicon substrate (14) serve as the source of doping.

REFERENCES:
patent: 3608189 (1971-09-01), Gray
patent: 3615938 (1971-10-01), Tsai
patent: 3700507 (1972-10-01), Murray
patent: 4045259 (1977-08-01), Sanders
patent: 4209350 (1980-06-01), Ho et al.
patent: 4224089 (1980-09-01), Nishimoto et al.
patent: 4455325 (1984-06-01), Razouk
patent: 4477310 (1984-10-01), Park et al.
patent: 4755486 (1988-07-01), Treichel et al.
patent: 4782036 (1988-11-01), Becker et al.
patent: 4818714 (1989-04-01), Haskell
patent: 4837179 (1989-06-01), Foster et al.

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