Dopant predeposition from high pressure plasma source

Details Dopant predeposition from high pressure plasma source Dopant predeposition from high pressure plasma source

1981-10-26

1983-05-03

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 85, B05D 108

Patent

active

043820999

ABSTRACT:
A method is provided for predepositing dopant material on semiconductor substrates. The semiconductor substrates are positioned within a high pressure plasma reactor apparatus. A high pressure rf plasma is generated in the apparatus at a pressure of about one atmosphere or greater. Dopant materials such as B.sub.2 H.sub.6, PH.sub.3, or AsH.sub.3 are introduced to the plasma and form ionized species of the dopant. The plasma and the ionized species are directed to the surface of the semiconductor substrates whereon a uniform layer of the dopant is deposited.

REFERENCES:
patent: 3246114 (1966-04-01), Matuay
patent: 3916034 (1975-10-01), Tsuchimoto
patent: 4003770 (1977-01-01), Janowiecki et al.
patent: 4179312 (1979-12-01), Keller et al.
patent: 4226897 (1980-10-01), Coleman
patent: 4279671 (1981-07-01), Komatsu
Rand, "J. Vac. Sci. Technol.", vol. 16, No. 2, 1979, pp. 420-427.
Knights et al., "Solid State Communications", vol. 21, pp. 983-986, 1977.

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