Dopant of arsenic, method for the preparation thereof and method

Fishing – trapping – and vermin destroying

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437141, 437160, 252950, 501154, 423 87, 4273722, H01L 2100, H01L 2102, H01L 21225, H01L 2122

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active

049295721

ABSTRACT:
The dopant body of arsenic for doping of a semiconductor substrate, e.g., silicon wafer, is a sintered body of a powder mixture comprising silicon arsenide, silica and, optionally, arsenic oxide in a specified proportion. The dopant body can be easily prepared and has various advantages over conventional elementary arsenic powder or a shaped body of silicon arsenide alone in respect of the high mechanical strength of the dopant body and absence of the problem of environmental contamination.

REFERENCES:
patent: 3879230 (1975-04-01), Nakamura
patent: 4211821 (1980-07-01), Hadni
patent: 4277525 (1981-07-01), Nakayama et al.
patent: 4430188 (1984-02-01), Cohn
patent: 4525429 (1985-06-01), Raiser et al.
patent: 4526826 (1985-07-01), Ten Eyck et al.
patent: 4798764 (1989-01-01), Tressler et al.

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