Metal treatment – Compositions – Heat treating
Patent
1985-04-10
1987-05-26
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29576T, 148175, 148187, 148DIG60, 148DIG93, 427 531, H01L 21265
Patent
active
046683046
ABSTRACT:
A dopant gettering semiconductor processing technique is disclosed for selectively activating an otherwise benign reactant to remove dopant from a semiconductor wafer substrate. Excimer pulsed ultraviolet laser radiation is provided at a discrete designated pulsed wavelength corresponding to a discrete designated gettering excitation energy of the otherwise benign reactant photochemically breaking bonds of the reactant such that the reactant is photolytically activated to remove dopant from the substrate, without thermally driven pyrolytic reaction. The bonds of a reactant gas are photochemically broken to produce gettering agents reacting with the substrate to remove dopant by forming a gaseous compound liberated from the substrate and benign to and unactivated by the discrete designated wavelength of the excimer pulsed ultraviolet laser radiation.
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Andreatta et al. Appl. Phys. Lelts. 40 (1982) 183.
Benjamin James A.
Hoppie Lyle O.
Pardee John B.
Schachameyer Steven R.
Schutten Herman P.
Eaton Corporation
Roy Upendra
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