Dopant film and methods of diffusing impurity into and manufactu

Details Dopant film and methods of diffusing impurity into and manufactu Dopant film and methods of diffusing impurity into and manufactu

1990-10-18

1991-12-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437955, 437974, 148DIG135, H01L 2122

Patent

active

050735179

ABSTRACT:
A dopant film contains an organic binder, an inorganic binder and a compound of an impurity element for diffusion. Both surfaces of the dopant film are coated with adhesive. Releasable sheets sandwich the dopant film. The dopant film permits automated alternate stacking with semiconductor wafers, providing an advantage of labor saving. When the alternate stacking is automated, it will become hard for the wafer breakage to occur, sharply decreasing the rate of breakage. Furthermore, since the adhesion of a semiconductor wafer improves, the variation in the diffusion depth will decrease. The semiconductor wafer manufacturing method includes the steps of impurity diffusion into both surfaces, dividing the wafer into two wafers in the direction of thickness, and polishing to a mirror surface each divided wafer opposite to the surface on which the impurity diffusion layer is formed. The material loss per wafer is reduced more than the conventional method due to the slicing into two wafers.

REFERENCES:
patent: 3971870 (1976-07-01), Christensen et al.
patent: 4391658 (1983-07-01), Kitone et al.
patent: 4756968 (1988-07-01), Ebe et al.
patent: 4853286 (1989-08-01), Narimatsu et al.

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