Dopant diffusion method of making semiconductor products

Details Dopant diffusion method of making semiconductor products Dopant diffusion method of making semiconductor products

1978-12-14

1981-06-23

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148187, H01L 21225

Patent

active

042748925

ABSTRACT:
Arsenic or other dopant selected from Group III or Group V of the Periodic Table of Elements is diffused into a silicon substrate to form a semiconductor product having a buried region, such as a buried layer or channel, by providing the substrate with a layer of polycrystalline silicon doped with the selected dopant and heating the substrate and layer in an oxygen environment at a temperature and for a period of time sufficient to oxidize all or substantially all the polycrystalline silicon and simultaneously diffuse the dopant into the substrate. The substrate comprises single crystal silicon or other silicon form whose oxidation rate is comparable to or less than the polycrystalline silicon to permit complete oxidation of the polycrystalline silicon without excessive oxidation of the substrate.

REFERENCES:
patent: 3156591 (1964-11-01), Hale et al.
patent: 3502517 (1970-03-01), Sussmann
patent: 3767485 (1973-10-01), Sahagun
patent: 3798081 (1974-03-01), Beyer
patent: 3928095 (1975-12-01), Harigaya et al.
patent: 4063967 (1977-12-01), Graul et al.
patent: 4063973 (1977-12-01), Kirita et al.
patent: 4151021 (1979-04-01), McElroy
Kemlage et al., I.B.M. Technical Disclosure Bulletin, vol. 13, No. 4, Sep. 1970, p. 911.

Affiliated with

Also associated with

Rating

Dopant diffusion method of making semiconductor products does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dopant diffusion method of making semiconductor products, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dopant diffusion method of making semiconductor products will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2206414