Dopant delivery system for semiconductor manufacture

Gas separation – Means within gas stream for conducting concentrate to collector

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55 18, 55 72, 55158, 55208, 55267, 55270, B01D 5322

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active

049368770

ABSTRACT:
A gas delivery system for supplying a vapor phase constituent at low concentration in a carrier gas, wherein the carrier gas is flowed through a contacting zone in which is disposed a permeable film through which the vapor phase constituent permeates into the contacing zone, to yield a product gas mixture comprising the vapor phase constituent and the carrier gas. In a particularly preferred embodiment, concentration of the vapor phase constituent in the product gas mixture is sensed, e.g., by a surface acoustical wave (SAW) concentration sensor device, and the concentration sensing is employed to controllably adjust the flow rate of the carrier gas flowed through the contacting zone, to maintain a selected delivery rate and concentration of the vapor phase constituent in the product gas mixture. The gas delivery system of the invention has particular utility for supplying gaseous dopant source compounds such as arsine, hydrogen selenide, and/or hydrogen telluride, for fabrication of semiconducting materials and semiconductor devices.

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