Dopant activation of heavily-doped semiconductor by high current

Details Dopant activation of heavily-doped semiconductor by high current Dopant activation of heavily-doped semiconductor by high current

1996-07-12

1999-03-16

Trinh, Michael

Semiconductor device manufacturing: process

Making point contact device

Direct application of electrical current

438466, 438510, 438530, H01L 2144, H01L 21425

Patent

active

058829539

ABSTRACT:
Dopant activation in heavily boron doped p.sup.+ --Si is achieved by applying electric current of high density. The p.sup.+ --Si was implanted by a 40 KeV BF.sup.2+ at an ion intensity 5.multidot.10.sup.15 ions per cm.sup.2 and annealed at 900.degree. C. for 30 minutes to obtain a partial boron activation according to conventional processing steps. To obtain additional activation and higher conductivity, current was gradually applied according to the invention to a current density of approximately 5.times.10.sup.6 A/cm.sup.2 was realized. The resistance of the p.sup.+ --Si gradually increases and then decreases with a precipitous drop at a threshold current. The resistance was reduced by factor of 5 to 18 times and was irreversible if an activation current threshold was reached or exceeded. The high-current-density-dopant activation occurs at room temperature.

REFERENCES:
patent: 4590589 (1986-05-01), Gerzberg
patent: 4662063 (1987-05-01), Collins et al.
patent: 4845045 (1989-07-01), Shacham et al.
patent: 5095362 (1992-03-01), Roesner
Wolf et al; "Silicon Processing For the VLSI Era"; vol 1, pp. 303-308, 1986 .

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