Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1989-02-28
1990-01-30
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330297, 330310, H03F 316
Patent
active
048976172
ABSTRACT:
This high voltage linear FET amplifier operates at voltage levels of ten's of thousand's of volts with power dissipation capabilities in the kilowatt range. It is a broadband device which features power amplification from DC to frequencies well in excess of 100 KHz. The amplifier uses a unity-gain inverting amplifier as its basic building block. N-number of these building blocks are stacked to accommodate whatever voltage stand-off level is desired. To operate stacked high voltage amplifiers, it is necessary to provide a bias shift (reference) progressively increasing in equal increments from the ground reference stage to the highest voltage level stage while preserving the fidelity of the signal applied to the first stage. This is done by establishing a phantom ground at all amplifiers for each progressive bias level.
REFERENCES:
patent: 3622899 (1971-11-01), Eisenberg
patent: 4193040 (1980-03-01), Weissman
patent: 4232272 (1980-11-01), Fabri
patent: 4429416 (1984-01-01), Page
patent: 4471315 (1984-09-01), Tokura et al.
patent: 4524327 (1985-06-01), Masuda et al.
patent: 4595884 (1986-06-01), Miller, Jr.
patent: 4843344 (1989-06-01), Cox
Jones Franklin B.
Kerfoot Charles S.
Milberger Walter E.
Franz Bernard E.
Mottola Steven
Singer Donald J.
The United States of America as represented by the Secretary of
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