Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-10-03
2006-10-03
Mills, Gregory (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S725000, C438S975000, C216S023000, C359S272000
Reexamination Certificate
active
07115513
ABSTRACT:
A method for forming uniform, sharply defined periodic regions of reversed polarization within a unidirectionally polarized ferroelectric material proceeds as a two-step process. First, alignment keys are formed on upper and lower planar surfaces of a unidirectionally polarized ferroelectric material by producing a spaced pair of alignment key shaped domain reversed regions and etching alignment key shaped notches in the upper and lower surfaces where the domain reversed regions intersect the surface planes. These notches, being vertically aligned between the upper and lower surfaces, are then used to align photomasks over a surface coating of photoresist formed directly on the material surface or on SiO2layers coating the material surface. The photoresist is then patterned and may also be thermally hardened to form a plurality of regularly spaced open strips, through which conducting metal contacts or ion-exchanged regions may be formed or contacts to the ferroelectric surface can be directly made by liquid conductors to produce the desired polarization reversals by application of an electric field at different temperatures of the material.
REFERENCES:
patent: 5009489 (1991-04-01), Eguchi et al.
patent: 5249250 (1993-09-01), Yamada et al.
patent: 5395495 (1995-03-01), Nozaki
patent: 5415743 (1995-05-01), Harada
patent: 5424867 (1995-06-01), Nihei et al.
patent: 5522973 (1996-06-01), Harada
patent: 5568308 (1996-10-01), Harada
patent: 5570225 (1996-10-01), Harada
patent: 5594746 (1997-01-01), Harada
patent: 6156255 (2000-12-01), Byer et al.
Chiang Tsung Yuan
Chou Ming-Hsien
Lin Tze-Chia
Sher Benny
Ackerman Stephen B.
HC Photonics Corporation
Mills Gregory
Saile Ackerman LLC
Umez-Eronini Lynette T.
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