Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-09-04
2007-09-04
Luu, Chuong A. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S271000, C438S587000, C438S270000, C257S331000, C257S333000
Reexamination Certificate
active
11329870
ABSTRACT:
A DMOS device having a trench bus structure thereof is introduced. The trench bus structure comprises a field oxide layer formed on a P substrate, and a trench extending from an top surface of the field oxide layer down to a lower portion of the P substrate. A gate oxide layer and a polysilicon bus are formed to fill the trench as a main portion of the bus structure. In addition, an isolation layer and a metal line are formed atop the polysilicon bus and the field oxide layer. An opening is formed in the isolation layer to form connections between the polysilicon bus and the metal line. In specific embodiments, the bus trench and the gate trenches of the DMOS device are formed simultaneously, and the polysilicon bus and the gate electrode are formed simultaneously as well. Therefore, the bus structure is able to form the DMOS transistor without demanding any lithographic step for defining the position of the polysilicon bus.
REFERENCES:
patent: 4791462 (1988-12-01), Blanchard et al.
patent: 5597765 (1997-01-01), Yilmaz et al.
patent: 5696010 (1997-12-01), Malhi
patent: 5814858 (1998-09-01), Williams
patent: 5882966 (1999-03-01), Jang
patent: 6031265 (2000-02-01), Hshieh
patent: 6238981 (2001-05-01), Grebs
patent: 6309929 (2001-10-01), Hsu et al.
patent: 6368920 (2002-04-01), Beasom
patent: 6391699 (2002-05-01), Madson et al.
patent: 6413822 (2002-07-01), Williams et al.
patent: 6433385 (2002-08-01), Kocon et al.
patent: 6461918 (2002-10-01), Calafut
patent: 6465304 (2002-10-01), Blanchard et al.
patent: 6475884 (2002-11-01), Hshieh et al.
patent: 2004/0188775 (2004-09-01), Peake et al.
Chang Chien-Ping
Chuang Chiao-Shun
Hsieh Hsin-Huang
Tseng Mao-Song
Luu Chuong A.
Mosel Vitelic Inc.
Townsend and Townsend / and Crew LLP
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