Division-based sensing and partitioning of electronic memory

Details Division-based sensing and partitioning of electronic memory Division-based sensing and partitioning of electronic memory

2007-03-16

2010-12-14

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185020, C365S185200

Reexamination Certificate

active

07852669

ABSTRACT:
Providing distinction between overlapping threshold levels of one or more multi-cell memory devices is described herein. By way of example, a system can include a sensing component that can measure a level associated with a first memory cell. The system can also include a comparison component that can compare the measured level associated with the first memory cell level to non-overlapping threshold levels, wherein such measurement can be used to determine a unique bit level associated with a second memory cell. By way of further example, methodologies are described for accurately measuring a bit level of a first cell of a dual-cell memory device, by comparing a second cell value to non-overlapping threshold values, as measured with respect to the second reference point.

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