Dividing method for wafer having film on the front side thereof

Details Dividing method for wafer having film on the front side thereof Dividing method for wafer having film on the front side thereof

2011-03-01

2011-03-01

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S118000, C438S460000, C438S462000, C257SE21244, C257SE21596, C257SE21237

Reexamination Certificate

active

07897488

ABSTRACT:
A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street.

REFERENCES:
patent: 2008/0153264 (2008-06-01), Nakamura et al.
patent: B2 3408805 (2003-05-01), None

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