Dividing metal plated semiconductor wafers

Metal working – Method of mechanical manufacture – Assembling or joining

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29591, B01J 1700

Patent

active

040330273

ABSTRACT:
A process for fabricating semiconductor devices is disclosed. In particular, a method for separating semiconductor wafers into device chips includes the step of forming a photoresist grid pattern underlying the metallization layer on the back face of the wafer. Mechanical means, such as scribing or sawing, are used to penetrate the metal layer, the underlying photoresist layer, and at least a portion of the semiconductor body. Separation then is completed either by breaking, further sawing or etching. The process enables a clean separation to be made through fairly heavy gold or gold alloy coatings which is particularly advantageous for devices which are to be eutectic-bonded to mounting platforms.

REFERENCES:
patent: 2784479 (1957-03-01), Roberts
patent: 2814853 (1957-12-01), Paskell
patent: 3720997 (1973-03-01), Black
patent: 3934331 (1976-01-01), Sugiyama

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