Divided photodiode

Details Divided photodiode Divided photodiode

1998-01-23

1999-12-21

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257443, 257448, H01L 3100

Patent

active

060052783

ABSTRACT:
A divided photodiode includes a semiconductor substrate; a semiconductor layer formed on a surface of the semiconductor substrate; and a plurality of isolating diffusion regions formed in a plurality of regions in the semiconductor layer so as to respectively extend from a surface of the semiconductor layer opposite to the other surface thereof in contact with a surface of the semiconductor substrate and to reach regions under the surface of the semiconductor substrate, thereby dividing the semiconductor layer into at least three semiconductor regions. A first buried diffusion region is further formed under the other isolating diffusion regions except for a particular one located in an isolating section in a combination of a plurality of the semiconductor regions which are adjacent to each other via the isolating section, and a depletion of the semiconductor substrate in a region under the other isolating diffusion region by the application of a reverse bias thereto is suppressed.

REFERENCES:
patent: 5283460 (1994-02-01), Mita
patent: 5466962 (1995-11-01), Yamamoto et al.
patent: 5602415 (1997-02-01), Kubo et al.

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