Divided electrode type semiconductor laser device

Details Divided electrode type semiconductor laser device Divided electrode type semiconductor laser device

1989-11-22

1991-05-21

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

050181599

ABSTRACT:
Disclosed is a divided electrode type semiconductor layer device designed to improve the separation of electrodes without reducing the amount of doping for carrier injection layers. A double-hetero-structure is formed on a semi-insulating substrate, and at least two pairs of carrier injection clad layers are thereafter buried like lands while a high-resistance portion is left between the carrier injection clad layers to electrically separate these layers. The electrodes are respectively formed on the separated carrier injection layers.

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