Diverse band gap energy level semiconductor device

Details Diverse band gap energy level semiconductor device Diverse band gap energy level semiconductor device

2006-05-02

2006-05-02

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

C257S106000, C257S551000, C257S603000, C257S656000

Reexamination Certificate

active

07038248

ABSTRACT:
Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof.

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