Diverse band gap energy level semiconductor device

Details Diverse band gap energy level semiconductor device Diverse band gap energy level semiconductor device

2006-05-23

2006-05-23

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C365S175000

Reexamination Certificate

active

07049678

ABSTRACT:
Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof.

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patent: 6034882 (2000-03-01), Johnson et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 10079521 (1998-03-01), None

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