Distribution plate for a reaction chamber with multiple gas inle

Coating apparatus – Gas or vapor deposition

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Details

118715, 118719, 156345, C23C 1600

Patent

active

059617233

ABSTRACT:
The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.

REFERENCES:
patent: 5453124 (1995-09-01), Moleshi
patent: 5755886 (1998-05-01), Wang
patent: 5781693 (1998-07-01), Ballance

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