Distributed reflector and wavelength-tunable semiconductor laser

Coherent light generators – Particular resonant cavity – Distributed feedback

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

372 20, 372 46, 372 50, 385 14, H01S 310

Patent

active

053253922

ABSTRACT:
The distributed reflector includes a substrate and at least one optical waveguide formed on the substrate and having a refractive index larger than the substrate and at least one optical confinement layer having a refractive index smaller than the optical waveguide layer. A diffractive grating is formed in at least one layer constituting the optical waveguide. The diffractive grating has a structure of which at least one parameter defining optical reflectivity varies depending on its position, and is formed continuously for at least two periods, the period being approximately defined by the length of repeating unit region. The parameter may be pitch, coupling coefficient, bandgap composition, phase shift, etc. The semiconductor laser includes the distributed reflector which may be of a distributed reflector type or distributed feed back type and has distributed reflector regions and a phase adjustment region. Application of current or voltage to the refractive index of the active region or inactive region in which a diffractive grating is present or absent adjusts the refractive index thereof and enables coarse and fine adjustment of lasing wavelength.

REFERENCES:
patent: 4856005 (1989-08-01), Oe et al.
patent: 4885753 (1989-12-01), Okai et al.
patent: 4896325 (1990-01-01), Coldern
patent: 5155737 (1992-10-01), Ikeda et al.
patent: 5187717 (1993-02-01), Horita et al.
Patent Abstracts of Japan, vol. 15, No. 379, Sep. 25, 1991 JP No. 31 50 890, Hitachi, Jun. 27th, 1991.
Patent Abstracts of Japan, vol. 9, No. 318, Dec. 13, 1985 JP No. 60 152 086, Hitachi, Aug. 10th, 1985.
Patent Abstracts of Japan, vol. 13, No. 574, Dec. 19, 1989 JP No. 12 39 892, Fujitsu, Sep. 25th, 1989.
Patent Abstracts of Japan, vol. 8, No. 21, Jan. 28, 1984 JP No. 58 182 890, Nippon Denki, Oct. 25th, 1983.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Distributed reflector and wavelength-tunable semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Distributed reflector and wavelength-tunable semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Distributed reflector and wavelength-tunable semiconductor laser will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2382408

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.