Distributed phase shift semiconductor laser

Details Distributed phase shift semiconductor laser Distributed phase shift semiconductor laser

1991-12-12

1993-12-21

Davie, James W.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, H01S 319

Patent

active

052727149

ABSTRACT:
A laser using a distributed phase shift structure is disclosed. The active medium is formed in the shape of a stripe having first and second surfaces and two ends. The stripe includes a large central portion and two end portions with the central portion being of different widths than the two end portions. A laser device which utilizes the active medium of the present invention further includes at least one P-guide layer and at least one N-guide layer, both having a higher bandgap energy than the active medium. The P-guide layer and the N-guide layer are located on opposing surfaces of the active medium. A current which is injected through the N-guide layer, the P-guide layer and the active medium induces single mode, narrow linewidth coherent light to issue from the active medium.

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