Amplifiers – Parametric amplifiers – Semiconductor type
Patent
1980-09-29
1982-11-30
Moskowitz, Nelson
Amplifiers
Parametric amplifiers
Semiconductor type
357 4, 357 57, 307424, H01S 400, H03F 310, H03F 704
Patent
active
043618146
ABSTRACT:
A parametric amplifier including a semiconductor body portion (10) comprising a plurality of zones (11,13,15, . . . ) of a first conductivity type, each of the zones having a thickness less than or equal to the Debye length in the semiconductor body portion (11,13,15, . . . ), each of the zones being separated from one another by corresponding insulating layers (12,14, . . . ). The body portion has a first edge portion abutting a first edge of the plurality of zones, and a second edge portion abutting a second edge of the plurality of zones spaced apart from said first edge.
A first interface (20) is provided adjacent the first edge portion for transmitting an electromagnetic wave into the semiconductor body portion for propagation therein; and a second interface (21) is provided adjacent the second edge portion for receiving an electromagnetic wave propagating in the body portion.
REFERENCES:
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patent: 3356866 (1967-12-01), Misawa
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patent: 4261771 (1981-04-01), Dingle et al.
patent: 4297718 (1981-10-01), Nishizawa et al.
Elliott Michael T.
Soclof Sidney I.
Hamann H. Fredrick
McGlynn Daniel R.
Moskowitz Nelson
Rockwell International Corporation
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