Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2006-09-22
2009-10-20
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S285000, C257SE21630, C438S186000
Reexamination Certificate
active
07605412
ABSTRACT:
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
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U.S. Appl. No. 12/176,488.
Hower Philip L.
Lin John
Merchant Steven L.
Walch David A.
Brady III Wade J.
Fahmy Wael
Ingham John C
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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