Distributed high voltage JFET

Details Distributed high voltage JFET Distributed high voltage JFET

2004-06-23

2008-08-26

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S269000, C257S285000, C257S286000, C257SE27012

Reexamination Certificate

active

07417270

ABSTRACT:
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.

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patent: 2004/0222475 (2004-11-01), Hao et al.

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