Distributed high voltage JFET

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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Details

C257S269000, C257S285000, C257S286000, C257SE27012

Reexamination Certificate

active

07417270

ABSTRACT:
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.

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patent: 6542001 (2003-04-01), Yu
patent: 2002/0008260 (2002-01-01), Yamazaki et al.
patent: 2003/0117825 (2003-06-01), Liaw et al.
patent: 2004/0222475 (2004-11-01), Hao et al.

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