Distributed fet amplifier and bias voltage supply circuit theref

Details Distributed fet amplifier and bias voltage supply circuit theref Distributed fet amplifier and bias voltage supply circuit theref

1988-02-02

1989-08-01

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330 54, 330286, 330295, 330297, 330307, H03F 360

Patent

active

048536490

ABSTRACT:
A distributed FET amplifier comprising an array of FET elements each having a gate terminal, a drain terminal and a source terminal. The gate terminals of the adjacent FET elements are connected by a first inductor, and the drain terminals of the adjacent FET elements are connected by a second inductor. Between the source terminals of each of the FET elements and the ground is connected a parallel circuit comprising a capacitor having a capacitance greater than the gate-source capacitance of the FET element and an impedance element connected in parallel to the capacitor for grounding the direct current. A bias voltage supply circuit for supplying a bias voltage to such as distributed amplifier is also disclosed.

REFERENCES:
patent: 4291286 (1981-09-01), Wagner
patent: 4327342 (1982-04-01), De Ronde
Lee, "MOSFETS Rejuvenate Old Design for Catv Broadband Amplifiers", Electronics, vol. 44, No. 6, Mar. 15, 1971, pp. 72-75.

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