Distributed-feedback type semiconductor laser

Details Distributed-feedback type semiconductor laser Distributed-feedback type semiconductor laser

1987-07-06

1989-02-21

Sikes, William L.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, H01S 308

Patent

active

048072451

ABSTRACT:
A distributed-feedback type semiconductor laser device having an active layer arranged between a pair of clad layers is provided with a stripe-shaped distributed-feedback mechanism, for example, having the configuration of a diffraction grating, and dummy regions of the same configuration as the distributed feedback mechanism arranged at opposite sides of the latter and being spaced from the distributor-feedback mechanism by relatively narrow plane regions, with the result that the distributed-feedback mechanism can be formed as a narrow stripe with good reproducibility so that it is possible to provide the semiconductor laser device with a long useful life and with the capability of operating in single longitudinal and transverse modes.

REFERENCES:
patent: 4624000 (1986-11-01), Streifer et al.
J. N. Walpole et al; "Distributed Feedback Pb.sub.1-x Sn.sub.x Te Double Heterostructure Lasers"; Appl. Phys. Letters, vol. 29, No. 5, Sep. 1, 1976; pp. 307-309.
Patent Abstracts of Japan, vol. 7, No. 258 (E-211)[1403], Nov. 17, 1983; & JP-A-58 143 595 (Sanyo Denki K.K.) 08-26-1983.
Patent Abstracts of Japan, vol. 8, No. 194 (E-264)[1631], Sep. 6, 1984; & JP-A-59 80 984 (Hitachi Seisakusho K.K.) 05-10-1984.
Patent Abstracts of Japan, vol. 9, No. 159 (E-326)[1882], Jul. 4, 1985; and JP-A-60 37 793 (Nippon Denki K.K.) 02-27-1985.
Toute L'Electronique, No. 514, May 1986, pp. 5, 6, 8, Paris, FR; "Panorama Technique: Composants opto-electroniques pour modulation multigigahertz".
IEEE Journal of Quantum Electronics, vol. QE-22, No. 7, Jul. 1986, pp. 1042-1051, IEEE, N.Y., K. Utaka et al., "Lamda/4-Shifted InGaAsP/InP DFB Laswers".

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