Distributed feedback semiconductor laser with gain modulation

Details Distributed feedback semiconductor laser with gain modulation Distributed feedback semiconductor laser with gain modulation

1997-10-16

2000-02-15

Bovernick, Rodney

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, H01S 308, H01S 319

Patent

active

060261102

ABSTRACT:
The invention provides a complex coupled distributed feedback (DFB) semiconductor laser device with energy band gap modulation. The device comprises an active region formed on a substrate, and a barrier region adjacent the active region, the energy band gap of the barrier region modulated along a cavity length direction to form a complex coupled grating. The modal gain is higher in the barrier region areas, having narrower energy band gap, due to higher material gain and higher optical confinement factor in these areas. Periodic modulation of the energy band gap of the barrier region produces gain (or loss) modulation and index modulation in the material of the active region, thus, gain coupling and index coupling mechanisms being provided. Methods of producing gain modulation in the DFB laser, and fabrication thereof are also provided.

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