Distributed Feedback semiconductor laser with controlled phase s

Details Distributed Feedback semiconductor laser with controlled phase s Distributed Feedback semiconductor laser with controlled phase s

1992-12-16

1994-06-14

Epps, Georgia Y.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, 372 45, 372 87, H01S 308

Patent

active

053217160

ABSTRACT:
A distributed feedback semiconductor laser comprises a semiconductor substrate, a waveguiding structure, provided on the semiconductor substrate, including a diffraction grating, an active layer and a top layer for ohmic contact, a first electrode provided on the top layer, a second electrode attached to the semiconductor substrate, and means for compensating spatial nonuniformity of a carrier density caused by spatial hole burning. The means changes an electrical resistance between the first electrode and the active layer, corresponding to a spatial distribution of photon density along the waveguiding structure.

REFERENCES:
patent: 4802187 (1989-01-01), Bouley et al.
Shirasaki et al., 311, 1-126, (1985) National Conference at the Electrocommunications Society (Semiconductor & Materials Division).
Usami et al., C-155, C-1-37 (1988) Autumn National Conference of the Electronic Information Communication Society.

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