Distributed feedback semiconductor laser having a laser-active l

Details Distributed feedback semiconductor laser having a laser-active l Distributed feedback semiconductor laser having a laser-active l

1989-03-22

1990-12-25

Epps, Georgia

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, 372 46, H01S 308

Patent

active

049808958

ABSTRACT:
A semiconductor laser which has a substrate, a laser-active layer formed on said substrate, at least a portion of said laser-active layer constituting a diffraction grating having a periodic refractive index distribution, and electrodes for supplying said laser-active layer with an electric current.

REFERENCES:
patent: 4654090 (1987-03-01), Burnham
Scifres et al., "Longitudinal and Radiation Modes in GaAs Single-Heterojunction Distributed-Feedback Injection Lasers," IEEE Transactions on Electron Devices, vol. Ed-22, No. 8, Aug. 1975, pp. 609-612.
Japanese Journal of Applied Physics, vol. 25, No. 9, Sep., 1986, pp. L783-785, Ishida, K. et al., "Fabrication of Index-Guided AlGaAs MOW Lasers by Selective Disordering Using be Focused Ion Beam Implantation".

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