Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-01-24
2006-01-24
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S098000, C372S050121, C372S103000
Reexamination Certificate
active
06989550
ABSTRACT:
The prior art distributed feedback laser having an InGaAlAs active layer involves a problem that its laser characteristics are deteriorated at high temperature due to the high device resistance. According to the present invention, a ridge type laser is fabricated by: forming an InGaAlAs-MQW layer104on a n-type InP substrate101; growing a p-type InGaAlAs-GRIN-SCH layer105, a p-type InAlAs electron stopping layer106and a p-type grating layer107in this order on the InGaAlAs-MQW layer104; forming a grating; and regrowing a p-type InP cladding layer108and a p-type InGaAs contact layer in this order. The concave depth of the grating is smaller than the thickness of the p-type grating layer107.
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Nakahara Kouji
Shinoda Kazunori
Taike Akira
Tsuchiya Tomonobu
Dickey Thomas
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Opnext Japan, Inc.
Tran Minhloan
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