Distributed feedback semiconductor laser device

Coherent light generators – Particular resonant cavity – Distributed feedback

Reexamination Certificate

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C372S046010, C372S046015

Reexamination Certificate

active

07003013

ABSTRACT:
A DFB semiconductor laser device including an n-type semiconductor substrate and a layer structure, overlying the semiconductor substrate, including an active layer, a compound semiconductor layer constituting a diffraction grating and overlying the active layer, and an embedding layer embedding the diffraction grating, wherein said at least one of the compound semiconductor layer and the embedding layer has a carrier density of 7×1017to 2×1018cm−3.

REFERENCES:
patent: 4935936 (1990-06-01), Nelson et al.
patent: 5306923 (1994-04-01), Kazmierski et al.
patent: 5666455 (1997-09-01), Aoki et al.
patent: 5721751 (1998-02-01), Itaya et al.
patent: 5821570 (1998-10-01), Kazmierski et al.
patent: 6674784 (2004-01-01), Takiguchi et al.

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