Distributed feedback semiconductor laser device

Details Distributed feedback semiconductor laser device Distributed feedback semiconductor laser device

1986-06-10

1988-06-14

Davie, James W.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 32, 372 46, H01S 319

Patent

active

047517190

ABSTRACT:
Laser chips which are stably operated in a single mode result from a semiconductor laser device in which a diffraction grating is formed neighboring an active layer. The distribution of current to be injected into the active layer is controlled to a configuration which substantially corresponds to that of the distribution of the field intensity of light along the laser optical axis inside the active layer.

REFERENCES:
patent: 4475200 (1984-10-01), Lee
patent: 4573158 (1986-02-01), Utaka et al.
patent: 4665528 (1987-05-01), Chinone et al.
Utoka et al., ".lambda./4 Shifted . . . ", Electronics Letters, vol. 20, No. 24, Nov. 22, 1984, pp. 1008-1009.
Mito et al., "InGaAsP Double-Channel-Planar-Buried-Heterostructure Lase Diode . . . ", Journal of Lightwave Technology, vol. LT-1, No. 1, Mar. 1983, pp. 195-202.
Yamaguchi et al., "Wide Range Wavelength Tuning in 1.3 .mu.m DBR-DC-PBH-LDs . . . ", Electronics Letters, vol. 21, No. 2, Jan. 17, 1985, pp. 63-65.

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