Coherent light generators – Particular resonant cavity – Distributed feedback
Patent
1995-09-28
2000-11-21
Davie, James W.
Coherent light generators
Particular resonant cavity
Distributed feedback
372 45, H01S 3085, H01S 319
Patent
active
061513512
ABSTRACT:
In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.
REFERENCES:
patent: 5208824 (1993-05-01), Tsang
patent: 5274660 (1993-12-01), Abe
patent: 5289494 (1994-02-01), Tade et al.
patent: 5319666 (1994-06-01), Ackerman
patent: 5329542 (1994-07-01), Westbrook
patent: 5394429 (1995-02-01), Yamada et al.
patent: 5539766 (1996-07-01), Ishino et al.
Aoki et al, "InGaAs/InGaAsP MQW electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, pp. 2088-2096, Jun. 1993.
Sasaki et al, "10 Wavelength MQW-DBR Lasers Fabricated By Selective MOVPE Growth", Electronics Letters, vol. 30, No. 10, pp. 785-786, May 12, 1994.
H. Kogelnik et al., "Coupled-Wave Theory of Distributed Feedback Lasers", J. appl. Phys., vol. 43, No. 5, pp. 2327-2335, 1972.
W.T. Tsang et al., "Long-Wavelength InGaAsP/InP Distributed Feedback Lasers Incorporating Gain-Coupled Mechanism", IEEE Photonics Technology Letters, vol. 4, No. 3, pp. 212-215, 1992.
D.H. Jang et al., "inAsP phase formations during the growth of a GaInAsP/InP distributed feedback laser diode structure on corrugated InP using metalorganic vapor phase epitaxy", Appl. Phys. Lett., vol. 66, No. 23, pp. 3191-3193, 1995.
Y. Luo et al., "Purely gain-coupled distributed feedback semiconductor lasers", Appl. Phys. Lett., vol. 56, No. 17, pp. 1620-1622, 1990.
K. H. Huang & B.W. Wessels, "Growth and Properties of InAsP Alloys Prepared by Organometallic Vapor Phase Epitaxy", Journal of Crystal Growth 92(1988) pp. 547-552.
T. Tanburn-Ek, R. A. Logan, S.N.G. Chu, A.M. Sergent, and K.W. Wecht, "Effects of strain in multiple quantum well distributed feedback lasers", Applied Physics Letters 57 (1990 ) No. 21, New York, NY.
Partial European Search Report for EP 95 11 5272, dated Jan. 10, 1996.
(1) Masahiro Aoki et al., "InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD," IEEE Journal of Quantum Electronics, Jun. 29, 1993, No. 6, NY, NY, pp. 2088-2096.
(2) SI. Weimin et al., "Theoretical Analysis of DFB Laser Integrated with EA Modulator," 2419A International Conference on Solid State Devices & Materials, Aug. 23, 1994, Yokohama, Japan, (1994), pp. 247-249.
(5) T. Sasaki et al., "10 wavelength MQW-DRB lasers fabricated by selective MOVPE growth," Electronics Letters, vol. 30, (May 12, 1994), No. 10, Stevenage, Herts, GB, pp. 785-786.
European Search Report 95115272.7 dated Sep. 24, 1996.
Ishino Masato
Kito Masahiro
Matsui Yasushi
Nakamura Shinji
Otsuka Nobuyuki
Davie James W.
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Distributed feedback semiconductor laser and method for producin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Distributed feedback semiconductor laser and method for producin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Distributed feedback semiconductor laser and method for producin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1264851