Distributed feedback semiconductor laser and method for producin

Details Distributed feedback semiconductor laser and method for producin Distributed feedback semiconductor laser and method for producin

1999-10-07

2000-08-22

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

438 42, 438 46, 117953, H01L 2100

Patent

active

061071129

ABSTRACT:
In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.

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