Distributed feedback semiconductor laser

Details Distributed feedback semiconductor laser Distributed feedback semiconductor laser

1986-03-18

1989-01-03

Sikes, William L.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, 372 49, 372102, 372 18, H01S 308

Patent

active

047962739

ABSTRACT:
A DFB semiconductor laser with an optical waveguide formed on a semiconductor substrate of a first conductivity type. The optical waveguide includes an active layer for emitting light and an optical waveguide layer adjacent the active layer. Facets of different reflectivities are provided at the ends of the light emitting region. A diffraction grating in the form of a periodic corrugation structure with a phase shift region is provided in the waveguide layer in the direction of light travel. The phase shift region is located nearer to the end facet of higher reflectivity than the end of lower reflectivity to produce a low oscillation threshold current and with it a stable single oscillation wavelength.

REFERENCES:
patent: 3970959 (1976-07-01), Wang et al.
Yamaguchi et al., "Highly Efficient Single Longitudinal-Mode Operation of Antireflection-Coated 1.3 .mu.m, DFB-DC-PBH-LD", Electronics Letters, Mar. 16, 1984, vol. 20, No. 6, pp. 233-235.
Eda et al., "High Efficiency Active Distributed-Reflector Lasers of Asymmetric Structure", National Conference Record, 1984, Optical and Radio Wave Electronics, The Institute of Electronis and Communication Engineers of Japan, Part 2, paper No. 271, pp. 2-15.
Utaka et al., "Analysis of Quarter-Wave-Shifted DFB Laser", Electronics Letters, 12th Apr. 1984, vol. 20, No. 8, pp. 326-327.
Akiba et al, ".lambda./4-Shift InGaAsP/InPo DFB Lasers by Simultaneous Exposure of Positive and Negative Photoresists", National Conference Record, 1984 Optical and Radio Wave Electronics, Part 2, Paper No. 265, Oct. 1984, The Institute of Electronics and Communication Engineers of Japan.

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