Distributed feedback semiconductor laser

Details Distributed feedback semiconductor laser Distributed feedback semiconductor laser

1985-08-20

1988-01-19

Davie, James W.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, H01S 308, H01S 319

Patent

active

047208368

ABSTRACT:
The present invention relates to a semiconductor laser which oscillates in a single longitudinal mode and with a low threshold current and which exhibits a good mode stability against reflected light, and provides a structure of a distributed feedback semiconductor laser with modulation for a gain. The structure is such that gain producing regions are periodically arranged and that a substance transparent to laser radiation is buried between the regions. A layer including the gain regions is formed of a superlattice layer, and an impurity is diffused or implanted into periodic positions of the layer, whereby the transparent regions and the gain regions with little lattice damages can be readily formed.

REFERENCES:
patent: 4400813 (1983-08-01), Kaminow
patent: 4594603 (1986-06-01), Holonyak, Jr.
Harris et al., "Distributed Feedback Semiconductor Injection Laser", IBM Technical Disclosure Bulletin, vol. 16, No. 1, Jun. 1973, pp. 171-172.

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