Distributed feedback semiconductor laser

Details Distributed feedback semiconductor laser Distributed feedback semiconductor laser

1988-07-01

1989-05-30

Davie, James W.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, 372 48, H01S 319

Patent

active

048357880

ABSTRACT:
A distributed feedback semiconductor laser is provided with first and second grooves, a mesa stripe which is positioned between the first and second grooves, and a third groove communicating to the first and second grooves and positioned behind a mesa stripe edge at which the mesa stripe is terminated. Each of the first and second grooves and of the third groove is formed beyond an active layer from a cladding layer. A width of mesa stripe is narrowered continuously at the mesa stripe edge in a direction of the third groove, a width of the third groove is narrower than the sum of widths of the first and second grooves and the mesa stripe, and edges of the first and second grooves and of the third groove are defined to be of a continuous shape. As a result, a leakage current is avoided to be flowed outside the active layer in the mesa stripe so that an oscillation threshold current is lowered even if the distributed feedback semiconductor laser is provided with a window region.

REFERENCES:
patent: 4751710 (1988-06-01), Yamaguchi et al.

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