Distributed feedback semiconductor laser

Details Distributed feedback semiconductor laser Distributed feedback semiconductor laser

1984-11-06

1987-05-12

Davie, James W.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, 372 47, H01S 319

Patent

active

046655271

ABSTRACT:
A distributed feedback semiconductor laser, in which a DFB region is formed by a plurality of first semiconductor layers and a plurality of second semiconductor layers larger in energy gap than the first semiconductor layers which are alternately arranged on a substrate with a period for developing a Bragg reflection at a desired wavelength. A p-type region is formed in a part of the DFB region in a manner to provide a plane of junction across the plurality of first semiconductor layers and the plurlaity of second semiconductor layers while an n-type region is formed in the remaining part of the DFB region. The plurality of first semiconductor layers and the plurality of second semiconductor layers are alternately deposited to form the DFB region.

REFERENCES:
patent: 3983509 (1976-09-01), Scifres et al.

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