Distributed feedback semiconductor laser

Details Distributed feedback semiconductor laser Distributed feedback semiconductor laser

1984-12-05

1986-12-30

Davie, James W.

Coherent light generators

Particular beam control device

Mode discrimination

357 17, 372 46, 372 50, 372 96, H01S 319

Patent

active

046334742

ABSTRACT:
A distributed feedback semiconductor laser which has periodic corrugations formed in a layer adjoining a light emitting layer so as to extend in the direction of travel of light and performs laser oscillation by the injection of current into the light emitting layer, in which a part of at least one metal electrode has a TM mode suppressing region disposed at a position where light is essentially distributed in the thickwise direction of the laser. A window region formed of a semiconductor larger in energy gap than the light emitting layer is disposed at both ends of the laser oscillation region in the direction of travel of light, the length of the window region being limited so that no substantial reflection occurs therein.

REFERENCES:
Utaka et al, "Room-Temperature CW Operation of Distributed-Feedback Buried-Heterostructure InGaAsP/InP Lasers Emitting at 1.57 .mu.m", Electronics Letters, vol. 17, No. 25, Dec. 10, 1981, pp. 961-963.

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