Distributed feedback semiconductor laser

Details Distributed feedback semiconductor laser Distributed feedback semiconductor laser

1996-03-06

1998-03-10

Bovernick, Rodney B.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, 372102, H01S 31055

Patent

active

057270155

ABSTRACT:
A gain coupled distributed feedback semiconductor laser includes an active layer and a diffraction grating provided in the vicinity of the active layer and having a plurality of light absorption layers periodically arranged along a resonator length direction. The order of the diffraction grating is one, a duty of the diffraction grating is in the range of about 0.4 to about 0.8, and a thickness of the light absorption layer is in the range of about 6 nm to about 30 nm.

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patent: 5517589 (1996-05-01), Takeuchi
patent: 5539766 (1996-07-01), Ishino et al.
David et al., "Coupling coefficients in gain-coupled DFB lasers: Inherent compromise between coupling strength and loss" IEEE Photonics Technology Letters (Feb. 1991) 3(5):439-441.
Luo et al., "Gain-coupled distributed feedback semiconductor lasers with an absorptive conduction-type inverted grating" IEEE Photonic Technology Letters (Feb. 1992) 4(7):692-695.

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