Distributed feedback laser with anti-reflection layer

Details Distributed feedback laser with anti-reflection layer Distributed feedback laser with anti-reflection layer

1988-11-01

1989-05-23

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, 372 96, 372 99, H01S 319

Patent

active

048336840

ABSTRACT:
A semiconductor laser of the distributed feedback (DFB or DBR) type is bounded in the longitudinal direction by end surfaces at right angles to the active region and at least one of these end faces is provided with an anti-reflection layer in order to suppress Fabry-Perot modes. In order to obtain an optimum effect, an anti-reflection layer of hafnium oxide is used. The invention is used with great advantage in lasers of the DCPBH (Double Channel Planar Buried Hetero-structure) type.

REFERENCES:
patent: 4387960 (1983-06-01), Tani
Yamaguchi et al; "Highly Efficient Single-Longitudinal-Mode Operation of Antireflection-Coated 1.3 .mu.m DFB-DC-PBHLD"; Electronics Letters; 15 Mar. 1984; vol. 20, No. 6; pp. 233-236.

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