Distributed feedback laser having enhanced etch stop features

Details Distributed feedback laser having enhanced etch stop features Distributed feedback laser having enhanced etch stop features

2008-06-12

2010-10-12

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010, C372S050110, C372S096000

Reexamination Certificate

active

07813395

ABSTRACT:
In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.

REFERENCES:
patent: 7197057 (2007-03-01), Hwang
patent: 7668223 (2010-02-01), Rosso et al.

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