Distributed feedback laser diodes with selectively placed lossy

Details Distributed feedback laser diodes with selectively placed lossy Distributed feedback laser diodes with selectively placed lossy

1992-02-18

1993-04-27

Epps, Georgia Y.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, 372 48, H01S 308, H01S 319

Patent

active

052068773

ABSTRACT:
A distributed-feedback semiconductor laser diode includes a patterned electrically conductive layer deposited on a capping layer, selectively forming a lossy section, such that electrical contact is absent for a small longitudinal section of the capping layer.

REFERENCES:
patent: 4835779 (1989-05-01), Liou
patent: 4903275 (1990-02-01), Ettenberg et al.
patent: 4932034 (1990-06-01), Usami et al.
patent: 5084894 (1992-01-01), Yamamoto
K. Aiki et al, "GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement", Appl. Phys. Lett., vol. 27, pp. 145-146 (1975).
H. Namikazi, M. K. Shams, and S. Wang, "Large-optical-cavity GaAs-(GaAl)As injection laser with low-loss distributed Bragg reflectors", Appl. Phys. Lett., vol. 31, pp. 122-124 (1977).
D. Anderson, R. August, and J. Coker, "Distributed-Feedback Double-Heterostructure GaAs Injection Laser with Fundamental Grating", Applied Optics, vol. 13, pp. 2742-2744 (1974).

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