Distributed feedback laser diode and a method for...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S096000

Reexamination Certificate

active

07627011

ABSTRACT:
The present invention is to provide a DFB-LD with a larger coupling efficiency between the grating and the active layer. The DFB-LD of the invention provides an n-type InP substrate, an n-type InP buffer layer, an AlGaInAs layer, a intermediate layer made of a material belonging to a group III-V compound semiconductor and containing phosphorous, and an active layer. The InP substrate and the InP buffer layer form a periodic undulation of the grating. Because of the AlGaInAs layer just provided on the InP buffer layer, the AlGaInAs layer and the intermediate layer can be thinned to get a flat top surface, which enhances the coupling efficiency between the grating and the active layer.

REFERENCES:
patent: 5771256 (1998-06-01), Bhat
patent: 2004/0057483 (2004-03-01), Takemi et al.
patent: 2005/0123018 (2005-06-01), Takagi et al.
patent: 2005/0286582 (2005-12-01), Hayakawa et al.
patent: 11-195836 (1999-07-01), None

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