Distributed feedback (DFB) quantum dot laser structure

Details Distributed feedback (DFB) quantum dot laser structure Distributed feedback (DFB) quantum dot laser structure

2006-11-24

2009-06-23

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular resonant cavity

Distributed feedback

C372S043010, C372S098000, C372S102000

Reexamination Certificate

active

07551662

ABSTRACT:
A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.

REFERENCES:
patent: 5084894 (1992-01-01), Yamamoto
patent: 5614436 (1997-03-01), Shim et al.
patent: 5878066 (1999-03-01), Mizutani et al.
patent: 5991322 (1999-11-01), Takiguchi et al.
patent: 6067312 (2000-05-01), Matz et al.
patent: 6252895 (2001-06-01), Nitta et al.
patent: 6411640 (2002-06-01), Nakanishi
patent: 6477191 (2002-11-01), Okada et al.
patent: 6704335 (2004-03-01), Koyama et al.
patent: 6728288 (2004-04-01), Funabashi et al.
patent: 6788725 (2004-09-01), Aoyagi et al.
patent: 2003/0016720 (2003-01-01), Funabashi et al.
patent: 2006/0045157 (2006-03-01), Ratowsky et al.
patent: 2006/0146902 (2006-07-01), Ikoma et al.
patent: 2000-286501 (2000-10-01), None
patent: 2003-037334 (2003-02-01), None
patent: 2003-204114 (2003-07-01), None
patent: 2004-095806 (2004-03-01), None
patent: 1995-0012971 (1995-05-01), None
patent: 2004-0032375 (2004-04-01), None
patent: WO-2004/109873 (2004-12-01), None
F. Klopf et al., “InAs/GaInAs quantum dot DFB lasers emitting at 1.3μm” Electronics Letters, May 10, 2001, vol. 37, No. 10, pp. 634-636.

Affiliated with

Also associated with

Rating

Distributed feedback (DFB) quantum dot laser structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Distributed feedback (DFB) quantum dot laser structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Distributed feedback (DFB) quantum dot laser structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4082227