Distributed feed back laser with a grating structure adjusted fo

Coherent light generators – Particular resonant cavity – Specified cavity component

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372 96, 372 44, 372 45, H01S 308, H01S 319

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active

058020969

ABSTRACT:
The present invention provides a grating structure partially provided in a semiconductor laser device having a first facet of a first reflectivity and a second facet of a second reflectivity which is larger than the first reflectivity. The grating structure extends within a half area near the first facet in the semiconductor laser device. The grating structure has a grating length in a cavity direction of not more than one third of a cavity length defined as a distance between the first and second facets. The grating structure has an integrated coupling coefficient value in the range of 0.4-0.6, the integrated coupling coefficient value is obtained by integrating coupling coefficient of the grating structure with positions in the cavity direction.

REFERENCES:
patent: 5469459 (1995-11-01), Okuda et al.
patent: 5568505 (1996-10-01), Okuda et al.

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