Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1988-10-07
1991-02-26
Pianalto, Bernard
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
118719, 118722, 156643, 427 47, 427 451, 427 531, 427 541, 427 55, B05D 306
Patent
active
049960776
ABSTRACT:
A distributed electron cyclotron resonance remote plasma processing apparatus and method which includes generating electron cyclotron resonance activated species in plasma formation regions distributed peripherally around, remote from the wafer processing chamber and in fluid communication with the main transfer chamber; containing the activated species using a microwave gas discharge and a magnetic field in the plasma formation regions; introducing the plasma streams to the main transfer chamber; creating a magnetic mirror in the main transfer chamber using a magnetic field; and introducing the species to the process chamber and to a face of the workpiece. Such an apparatus could use multiple energy/excitation sources.
REFERENCES:
Keizo et al., "The Roles of Ions and Neutral Active Species in Microwave Plasma Etching", J. Electrochem. Soc.: Solid-State Science and Technology, Jun. 1979, pp. 1024-1028.
Matsuo et al., "Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma", Japanese Journal of Applied Physics, vol. 22, No. 4, Apr. 1983, pp. L210-L212.
Burke et al., "Microwave Multipolar Plasma for Etching and Deposition", Solid State Technology, Feb. 1988, pp. 67-71.
Ono et al., "Reactive Ion Stream Etching Utilizing Electron Cyclotron Resonance Plasma", J. Vac. Sci. Technol. B, vol. 4, No. 3, May/Jun. 1986, pp. 696-700.
Hale et al., "ibex-9000 ECR" Microscience, advertisement sent Sep. 29, 1987.
Cooke et al., "Multipolar ECR: Opening a New Range of Low-Damage Etch Processes", Semicon West Proceeding, 1988, pp. 289-296.
Hirao et al., "Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method", Japanese Journal of Applied Physics, vol. 27, No. 1, Jan. 1988, pp. L21-L23.
Alcatel, "RCE-160, Low Pressure High Density Plasma Processing with the Microwave DECR Reactor", 7.91.156.DVM-SDG. Printed in France 05/88. TechnicMedia pp.?
Alcatel, "Alcatel Technology: The Ultimate"7.91.153 DVM-SDG. Printed in France 03/88. TechnicMedia, pp. ?
Sumitomo Metals, "Bias ECR Plasma CVD", SME-TR-COO3, 1986, 2, pp. 1-13.
Sumitomo Metals "ECR Plasma Etching" SME-TR-E002, pp. 1-16.
Advertisement "ECR Plasma CVD System" Nakamura et al., ECR Plasma Deposition Under a Controlled Magnetic Field., Abstract Mp. 303, pp. 439-440.
Huang Steve S.
Moslehi Mehrdad M.
Barndt B. Peter
Comfort James T.
Pianalto Bernard
Sharp Melvin
Texas Instruments Incorporated
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